The week's pick
Reseach Article
A 2~8 GHz UWB Low Noise Amplifier using 0.15 µm GaAs pHEMT Technology for Multiband Wireless Application
by
Kunal S. Khandelwal,
Abdul K. Kureshi
| Communications on Applied Electronics |
| Foundation of Computer Science (FCS), NY, USA |
| Volume 3 - Number 3 |
| Year of Publication: 2015 |
| Authors: Kunal S. Khandelwal, Abdul K. Kureshi |
10.5120/cae2015651888
|
Kunal S. Khandelwal, Abdul K. Kureshi . A 2~8 GHz UWB Low Noise Amplifier using 0.15 µm GaAs pHEMT Technology for Multiband Wireless Application. Communications on Applied Electronics. 3, 3 ( October 2015), 1-5. DOI=10.5120/cae2015651888
@article{
10.5120/cae2015651888,
author = {
Kunal S. Khandelwal,
Abdul K. Kureshi
},
title = { A 2~8 GHz UWB Low Noise Amplifier using 0.15 µm GaAs pHEMT Technology for Multiband Wireless Application },
journal = {
Communications on Applied Electronics
},
issue_date = { October 2015 },
volume = { 3 },
number = { 3 },
month = { October },
year = { 2015 },
issn = { 2394-4714 },
pages = {
1-5
},
numpages = {9},
url = {
https://www.caeaccess.org/archives/volume3/number3/443-2015651888/
},
doi = { 10.5120/cae2015651888 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Journal Article
%1 2023-09-04T19:43:53.091884+05:30
%A Kunal S. Khandelwal
%A Abdul K. Kureshi
%T A 2~8 GHz UWB Low Noise Amplifier using 0.15 µm GaAs pHEMT Technology for Multiband Wireless Application
%J Communications on Applied Electronics
%@ 2394-4714
%V 3
%N 3
%P 1-5
%D 2015
%I Foundation of Computer Science (FCS), NY, USA
Abstract
This paper proposes 2GHz ~ 8GHz UWB LNA with totem pole technique for low noise figure. The LNA was designed using 0.15 µm GaAs pHMET process. The designed LNA was simulated in ADS tool. The LNA exhibits a S(2,1) of 33.4~29.7 dB, minimum noise figure is 1.383~1.391 dB, reverse isolation was better than 40 dB in entire band. The LNA draws 32 mA. Resistive feedback technique was used for wideband matching and low noise figure.
References
- Chau-Ching Chiong, Ding-Jie Huang, Ching-Chi Chuang, Yuh Jing Hwang, Ming-Tang Chen and Huei Wang, “Cryogenic 8-18 GHz MMIC LNA using GaAs PHEMT”, Asia-Pacific Microwave Conference Proceedings, IEEE, pp. 261-263, 2013.
- Yanhui Lu, Qinghua, Wenguang Li, Guoan Wu and Huijie Qi, “Design of 1GHz~4GHz ultra-wide band low noise amplifier”, 2nd International Conference on Information Engineering and Computer Science (ICIECS),Wuhan, IEEE ,pp. 1-4, 25-26 Dec. 2010.
- C.Feng , X.P.Yu, Z.H. Lu, W.M.Lim and W.Q.Sui, “3-10 GHz self-biased resistive-feedback LNA with inductive source degeneration”, Institution of Engineering and Technology, Electronics Letters, Vol. 49, NO.6, 14th March 2013.
- Xiaohua Fan, Edgar Sanchez-Sinencio, and Jose Silva-Martinez, “A 3GHz-10GHz Common Gate Ultrawideband Low Noise Amplifier”, 48th Midwest Symposium on Circuits and Systems, IEEE, Covington, Vol. 1 pp. 631–634, 7-10 Aug. 2005.
- Yi-Jan Emery Chen and Yao-I. Huang, “Development of Integrated Broad-Band CMOS Low-Noise Amplifiers”, IEEE Transaction on circuit and systems-I, Vol. 54, NO. 10, pp. 2120–2127, October 2007.
- Yi-Jan Emery Chen and Yao-I.Huang, “Development of Integrated Broad-Band CMOS Low-Noise Amplifiers”, IEEE Transactions on Circuits and Systems-I, Regular Papers, Vol. 54, NO. 10, Oct. 2010.
- Yueh-Hua Yu, Yong-Sian Yang, Yi-Jan Emery Chen, “A Compact Wideband CMOS Low Noise Amplifier with Gain Flatness Enhancements”, IEEE Journal of Solid State Circuits, Vol. 45, NO. 3, March 2010.
- IEEE 802.15 WPAN High Rate Alternative PHY Task Group3a(TG3a),http://www.ieee802.org/15/pub/TG3a.html.
- FCC, “Revision of Part 15 of the Commission’s Rules Regarding Ultra-Wideband Transmission Systems”, First Report and Order, ET Docket 98-153, FCC 02-8, adopted/ released Feb. 14/Apr. 22, 2002.
- Michael Angelo G. Lorenzo, Maria Theresa G. de Leon, “Comparison of LNA Topologies for Wimax Applications in a standard 90-nm CMOS Process”, 12th International Conference on Computer Modelling and Simulation, IEEE, pp. 642-647, 24-26 March 2010.
- Hyung-Jin Lee, Dong Sam Ha and Sang S. Choi,, “A Systematic Approach to CMOS Low Noise Amplifier Design for Ultrawideband Applications”, International Symposium on Circuits and Systems (ISCAS),IEEE, Vol. 4, pp. 3962-3965,23-26 May 2005.
- Giuseppina Sapone and Giuseppe Palmisano, “A 3-10-GHz Low-Power CMOS Low-Noise Amplifier for Ultra-Wideband Communication”, IEEE Transactions on Microwave Theory and Techniques, Vol. 59, NO. 3, pp. 678-686, March 2011.
- A.I.A. Galal, R.K. Pokharel, Haruichi Kanay, and Keiji Yoshida, “ Ultra wideband Low Noise Amplifier with Shunt Resistive Feedback in 0.18µm CMOS Process”, Silicon Monolothic Integrated Circuits in RF Syatems (SiRF),IEEE, New Orleans LA, pp. 33-36, 11-13 Jan. 2010.
- Yi-wen Huang, Wan-rong Zhang, Hong-yun Xie, Pei Shen, Jia Li, Jun-ning Gan, Lu Huang, Ning Hu, “A 3-10 GHz Low-Noise Amplifier Using Resistive Feedback in SiGe HBT Technology”, International Conference on Communication Software and Networks (ICCSN),Macau ,IEEE, pp. 313–315, 27-28 Feb 2009.
- Xiaohua Fan, Edgar Sanchez-Sinencio, and Jose Silva-Martinez, “A 3GHz-10GHz Common Gate Ultrawideband Low Noise Amplifier”, 48th Midwest Symposium on Circuits and Systems, IEEE, Covington, Vol. 1 pp. 631–634, 7-10 Aug. 2005.
- Chia-Song Wu, Tah-yeong Lin, Chien-Huang Chang and Hsien-Ming Wu, “A Ultrawideband 3-10 GHz Low-Noise Amplifier MMIC Using Inductive-series Peaking Technique”, International Conference on Electric Information and Control Engineering (ICEICE) ,Wuhan, IEEE ,pp. 5667-5670, 15-17 April. 2011.
- Sanghoon Joo, Tae-Young Choi and Byunghoo Jung, , “A 2.4 GHz Resistive feedback LNA in 0.13µm CMOS”, IEEE Journal of Solid State Circuits, Vol. 44, NO. 11, Nov. 2009.
- K.en Payne, “Practical RF Amplifier Design Using the Available Gain Procedure and the Advanced Design System EM/ Circuit Co-Simulation Capability”, Agilent Technologies, White Paper, 2008.
- M.L.Edwards and J. H. Sinksy, “A New Criteria for Linear 2-Port Stability Using a Single Geometrically Devices Parameters”, IEEE Transactions on Microwave theory and Techniques, Vol. 40, NO. 12, pp. 2803-2811, Dec. 1992
- Zulfa Hasan-Abrar, Yut H. Cho and Yong W. Eng, “A Low-voltage, Fully –integrated (1.5-6) GHz Low Noise Amplifier in E-mode pHEMT Technology for Multiband, Multimode Applications”, Proceedings of the 3rd European Microwave Integrated Circuits Conference ,IEEE, pp. 306–309, October 2008.
- Tae Wook Kim, Harish Muthali, Sustana Sengupta, Kenneth Barnett and James Jafee, “Multi-Standard Mobile Broadcast Receiver LNA With Integrated Selectivity and Novel Wideband Impedance Matching Technique”, IEEE Journal of Solid State Circuits, vol. 44, NO. 3, March 2009.A Low-Power, Linearized, Ultra-Wideband LNA Design Technique”, IEEE Journal of Solid State Circuits, Vol. 44, NO. 2, Feb 2009.
Index Terms
Computer Science
Information Sciences
Keywords